Customization: | Available |
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Application: | Detector, Power Electronic Components, Television |
Certification: | RoHS |
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Crystal structure | Trigonal system |
Lattice constant | a=5.154Å,c=13.783Å |
density | 7.45g/ cm3 |
melting point | 1650°C |
Curie temperature | 603±2ºC |
Moh's hardness | 5.5~6.0 |
Dielectric constant | es11/eo:39~43, es33/eo:42~43; et11/eo:51~54, et33/eo:43~46 |
Resistivity | 1015wm |
Thermal expansion coefficient | a1=a2=1.61×10 -6 /ºC, a3=4.1×10 -6 /ºC |
Refractive index | n0=2.176, ne=2.180 @633mn |
Electro-optic coefficient | R33=30.4 |
Pyroelectric coefficient | 2.3×10 -7 C/cm 2 /K |
Through range | 400nm-5000nm |
size | 4"/6"/8" ingot, wafer, or custom size (SAW/Optical) |
doping | Undoped or dopable Fe |
Wafer Thickness | 0.25, 0.35, 0.50(mm) |
Tangential | Y42°/Y36°/X/Y/Z can be customized according to customer needs |
surface treatment | Polished on one side, Polished on both sides |
TTV | ≤ 5µm |
polished surface | Roughness Ra≤1nm |
Chamfer | 0.1mm@45° or round edge |