Y42 D100*0.25 Litao3 Saw Filter Wafer

• Customization: Available
• Application: Detector, Power Electronic Components, Television
• Certification: RoHS
• Model NO.: Y42 D100*0.25 LiTaO3 SAW filter wafer
• Manufacturing Technology: Optoelectronic Semiconductor
• Material: Compound Semiconductor
• Model: Single Side Polished and Blackended
• Package: 100 Class Clean Bag
• Signal Processing: N/a
• Transport Package: 100 Classs Packaging
• Specification: Y42degree Diameter 100mm, 0.25mm thick
• Trademark: OPTICRYSTAL
• Origin: Shanghai
• HS Code: 9001909090
• Production Capacity: 100000PCS Per Year

Product Description

Lithium tantalate LiTaO ₃

LT lithium tantalate LiTaO ₃ crystal is an important multifunctional crystal material. The crystal has excellent piezoelectric, ferroelectric, acousto-optic and electro-optic effects , so it has become an important choice in the fields of surface acoustic wave SAW devices, optical communications, lasers and optoelectronics. basic functional materials. Polished LT wafers are widely used in the manufacture of electronic communication devices such as resonators, filters, transducers, etc., especially for the manufacture of high-frequency surface acoustic wave devices due to their good electromechanical coupling, temperature coefficient and other comprehensive properties, and are used in Mobile phones, walkie-talkies, satellite communications, aerospace and many other high-end communication fields.
Main features:
Curie temperature point 603±2ºC; Electromechanical coupling coefficient R15≥0.3; Stable chemical and physical properties
Typical application:
Surface acoustic wave filter, resonator Q switch, optical modulator, acousto-optic switch, laser frequency doubling, optical parametric oscillator, optical memory, high temperature and high frequency ultrasonic detector, infrared detector, optical pickup device, etc.
Material properties:

Crystal structure	Trigonal system
Lattice constant	a=5.154Å,c=13.783Å
density	7.45g/ cm3
melting point	1650°C
Curie temperature	603±2ºC
Moh's hardness	5.5~6.0
Dielectric constant	es11/eo:39~43, es33/eo:42~43; et11/eo:51~54, et33/eo:43~46
Resistivity	1015wm
Thermal expansion coefficient	a1=a2=1.61×10 -6 /ºC, a3=4.1×10 -6 /ºC
Refractive index	n0=2.176, ne=2.180 @633mn
Electro-optic coefficient	R33=30.4
Pyroelectric coefficient	2.3×10 -7C/cm 2 /K
Through range	400nm-5000nm

Product parameters:

size	4"/6"/8" ingot, wafer, or custom size (SAW/Optical)
doping	Undoped or dopable Fe
Wafer Thickness	0.25, 0.35, 0.50(mm)
Tangential	Y42°/Y36°/X/Y/Z can be customized according to customer needs
surface treatment	Polished on one side, Polished on both sides
TTV	≤ 5µm
polished surface	Roughness Ra≤1nm
Chamfer	0.1mm@45° or round edge